Richardson Electronics partners with NoMIS Power to expand silicon carbide portfolio

• Richardson Electronics entered a global strategic partnership with NoMIS Power to expand its silicon carbide power semiconductor offering.
• The tie-up adds SiC device and module capabilities spanning 1.2 kV to 10 kV, with a focus on medium- and high-voltage applications at 3.3 kV and above.
• Richardson aims to accelerate adoption in power conversion markets such as battery energy storage, renewable energy systems, AI data center power infrastructure, rail, aerospace and defense.
• The collaboration also targets customers migrating from silicon IGBT designs to SiC-based architectures to improve efficiency, switching performance, thermal behavior, and power density.

Disclaimer: This news brief was created by Public Technologies (PUBT) using generative artificial intelligence. While PUBT strives to provide accurate and timely information, this AI-generated content is for informational purposes only and should not be interpreted as financial, investment, or legal advice. Richardson Electronics Ltd. published the original content used to generate this news brief via GlobeNewswire (Ref. ID: 202605201100PRIMZONEFULLFEED9723045) on May 20, 2026, and is solely responsible for the information contained therein.