Richardson Electronics Forms Global Strategic Partnership With NoMIS Power To Expand Silicon Carbide Power Semiconductor Portfolio For High-Voltage Energy, Industrial, And AI Infrastructure Markets

Richardson Electronics, Ltd. (NASDAQ: RELL) today announced a new global strategic partnership with NoMIS Power, a leading designer of advanced silicon carbide (SiC) power semiconductor technologies.

Through this collaboration, Richardson Electronics will expand its portfolio of next-generation power solutions by leveraging NoMIS Power's rugged, reliable, and customizable SiC technologies. The partnership adds targeted capabilities across 1.2 kV to 10 kV, with particular emphasis on medium-voltage and high-voltage SiC solutions at 3.3 kV and above for demanding power conversion applications.

The partnership is expected to accelerate the adoption of high-performance SiC technologies across key growth markets, including battery energy storage systems (BESS), renewable energy conversion, AI data center power infrastructure, high-voltage direct current (HVDC) interfaces, solid-state transformers, rail and heavy-duty transportation, industrial drives, aerospace and defense power systems, marine power, and other mission-critical electrification platforms.

For customers developing higher-voltage systems, the collaboration also strengthens Richardson Electronics' ability to support the transition from legacy silicon insulated gate bipolar transistor (IGBT) solutions to more efficient SiC-based architectures. In these applications, SiC can enable lower switching losses, higher switching frequency, improved thermal performance, greater power density, and more compact system designs.

This partnership enhances Richardson Electronics' - Power & Microwave Technologies portfolio by adding advanced silicon carbide devices and modules that address rapidly growing global end markets. The addition of high-efficiency, high-reliability SiC solutions further strengthens PMT's position in electrification and power conversion applications, supporting long-term revenue growth and expanded market opportunities.

NoMIS Power brings deep expertise in silicon carbide device design, advanced packaging architectures, power module development, and application-specific customization. Its portfolio includes medium-voltage and high-voltage SiC MOSFET platforms, as well as unique high-resistance small-die SiC solutions for compact, high-voltage, low-current applications. These devices are especially well-suited for applications such as insulation monitoring, solid-state relays, high-voltage sensing, auxiliary power supplies, and control and protection functions, where footprint, voltage capability, and reliability are critical.